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SPICE MODELS: MMBF170
Lead-free Green
MMBF170
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
* * * * * * * * * * * * * * *
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant (Note 2)
E G TOP VIEW S D G H K J L M D B C A
SOT-23 Dim A B C D E G H J K L M Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8
Mechanical Data
Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking: (See Page 2) K6Z Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate)
Gate
Drain
a
Source
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
@ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID Pd RqJA Tj, TSTG MMBF170 60 60 20 40 500 800 300 1.80 417 -55 to +150 Units V V V mA mW mW/C K/W C
Characteristic Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Note:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead.
DS30104 Rev. 8 - 2
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MMBF170
a Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Time Turn-Off Time
Notes: 3.
@ TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss ton toff Min 60 3/4 3/4 0.8 3/4 3/4 80 3/4 3/4 3/4 3/4 3/4 Typ 70 3/4 3/4 2.1 3/4 3/4 3/4 22 11 2.0 3/4 3/4 Max 3/4 1.0 10 3.0 5.0 5.3 3/4 40 30 5.0 10 10 Unit V A nA V W mS pF pF pF ns ns VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50W VDS = 10V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 100mA VDS = 60V, VGS = 0V VGS = 15V, VDS = 0V VDS = VGS, ID = 250mA VGS = 10V, ID = 200mA VGS = 4.5V, ID = 50mA VDS =10V, ID = 0.2A
Short duration test pulse used to minimize self-heating effect.
Ordering Information
Device MMBF170-7-F
Notes:
(Note 4) Packaging SOT-23 Shipping 3000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K6Z
K6Z = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D
DS30104 Rev. 8 - 2
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YM
MMBF170
1.0
7
VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V
10V
Tj = 25 C
ID, DRAIN-SOURCE CURRENT (A)
0.8
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
6 5
VGS = 5.0V
0.6
5.5V
4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0
5.0V 0.4
VGS = 10V
0.2
2.1V 0 0 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics
ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current
6
2.0
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.5
VGS = 10V, ID = 0.5A
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
5
4
ID = 50mA
ID = 500mA
1.0
VGS = 5.0V, ID = 0.05A
3 2
0.5
1 0
0 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE ( C) Fig. 3 On-Resistance vs Junction Temperature
0
2
4
6
8
10
12
14
16
18
VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage
350
PD, POWER DISSIPATION (mW)
300 250 200 150 100 50 0
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (C) Fig. 5, Max Power Dissipation vs Ambient Temperature
DS30104 Rev. 8 - 2
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MMBF170
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30104 Rev. 8 - 2
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MMBF170

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